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  savantic semiconductor product specification silicon npn power transistors 2SC4105 d escription with to-220c package high breakdown voltage fast switching speed wide area of safe operation applications for switching regulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 4 a i cm collector current-peak 8 a i b base current 1.5 a p c collector dissipation t c =25 40 w t j junction temperature 150  t stg storage temperature -55~150 
savantic semiconductor product specification 2 silicon npn power transistors 2SC4105 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ;r be = : 400 v v (br)cbo collector-base breakdown voltage i c =1ma; i e =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 7 v v cesat collector-emitter saturation voltage i c =2a; i b =0.4a 0.8 v v besat base-emitter saturation voltage i c =2a; i b =0.4a 1.5 v i cbo collector cut-off current v cb =400v ;i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =0.4a ; v ce =5v 15 50 h fe-2 dc current gain i c =2a ; v ce =5v 10 h fe-3 dc current gain i c =10ma ; v ce =5v 10 f t transition frequency i c =0.4a ; v ce =10v 20 mhz c ob collector output capacitance f=1mhz ; v cb =10v 50 pf switching times t on turn-on time 0.5 s t s storage time 2.5 s t f fall time i c =3a, i b1 =0.6a i b2 =-1.2a; v cc =200v r l =66.6 b 0.3 s  h fe-1 classifications l m n 15-30 20-40 30-50
savantic semiconductor product specification 3 silicon npn power transistors 2SC4105 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC4105


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